GSD61015 rectifier diode standard and reverse polarities compression bonded encapsulation voltage up to 1200 v average current 150 a surge current 3 ka blocking characteristics characteristic conditions v rrm repetitive peak reverse voltage 1200 v v rsm non-repetitive peak reverse voltage 1300 v i rrm repetitive peak reverse current, max. v rrm , single phase, half wave, tj = tjmax 30 ma forward characteristics i f(av) average forward current sine wave,180 conduction, tc = 150c 150 a i f(rms) r.m.s. forward current sine wave,180 conduction, tc = 150c 236 a i fsm surge forward current non rep. half sine wave, 50 hz, v r = 0 v, t j = t jmax 3 ka i2t i2 t for fusing coordination 37.5 ka2s v f(to) threshold voltage t j = t jmax 0.8 v r f forward slope resistance t j = t jmax 1.17 m w v fm peak forward voltage, max forward current i f = 500 a, tj = 25c 1.38 v switching characteristics q rr rverse recovery charge t j = t jmax , i f = a, tp = s, di/dt = a/s c i rr reverse recovery current v r = v, dv/dt = v/s a t rr reverse recovery time s v fp forward recovery voltage t j = t jmax , di/dt = a/s v thermal and mechanical characteristics r th(j-c) thermal resistance (junction to case) double side cooled 0.28 c/w r th(c-h) thermal resistance (case to heatsink) double side cooled 0.15 c/w t jmax max operating junction temperature 200 c t stg storage temperature -65 / 200 c m mounting torque 12.5 nm mass 100 g document GSD61015t001 value symbol a b c d e f g h inches 0.63 0.34 0.98 1.58 0.89 4.48 0.63 0.281 mm 16.0 8.6 24.9 40.1 22.6 113.8 16.0 7.14 strike distance .64 inch / 16.2 mm (min) .375 - 24 unf - 2a thd. 1.055 inch / 26.8 mm across flat gps - green power semiconductors spa factory: via ungaretti 10, 16157 genova, italy phone: +39-010-667 8800 fax: +39-010-667 8812 web: www.gpsemi.it e-mail: info@gpsemi.it green power semiconductors
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